High Mobility Silicon Dioxide Layers on 4H-SiC Deposited by Means of Atomic Layer Deposition

A study on the impact of different growth and deposition techniques reliability silicon dioxide (SiO 2 ) layers carbide (SiC) metal-oxide-semiconductor capacitors (MOSCAPs) is presented compared to channel mobilities that were extracted from lateral field-effect transistors (LMOSFETs). Oxide formed using atomic layer (ALD), low pressure chemical vapour (LPCVD) direct thermal growth, including post-deposition anneals (PDAs) in nitrious oxide forming gas (FG) for ALD-and LPCVD-deposited oxides. Electrical characterisation results at elevated temperatures show a PDA FG leads highest average breakdown electric field 10.08 MV/cm, outperforming all other device splits. Time-dependent dielectric (TDDB) showed time failure 63% investigated samples 9MV/cm FG-annealed was about 50% higher than oxides had undergone an N O PDA. Channel FG-treated averaged three four times datasets, showing excellent peak 60 cm /V.s 108 room temperature 175°C, respectively.